MC9S12P128 Datasheet, PDF (520/564 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
The D-Flash sector erase time is ~5ms on a new device and can extend to ~20ms as the flash is cycled.
Table A-18. NVM Timing Characteristics (FTMRC)
Num C
Rating
Symbol
Min
Typ⁽¹⁾
1
Bus frequency
f_NVMBUS
1
—
2
Operating frequency
f_NVMOP
0.8
1.0
3 D Erase all blocks (mass erase) time
t_mass
—
100
4 D Erase verify all blocks (blank check) time
t_check
—
—
5 D Unsecure Flash time
t_uns
—
100
6 D P-Flash block erase time
t_pmass
—
100
7 D P-Flash erase verify (blank check) time
t_pcheck
—
—
8 D P-Flash sector erase time
t_pera
—
20
9 D P-Flash phrase programming time
10 D D-Flash sector erase time
t_ppgm
—
226
t_dera
—
5⁽⁴⁾
11 D D-Flash erase verify (blank check) time
t_dcheck
—
—
12a D D-Flash one word programming time
t_dpgm1
—
100
12b D D-Flash two word programming time
t_dpgm2
—
170
12c D D-Flash three word programming time
t_dpgm3
—
241
12d D D-Flash four word programming time
t_dpgm4
—
311
12e D D-Flash four word programming time crossing row
boundary
t_dpgm4c
—
328
1. Typical program and erase times are based on typical f_NVMOP and maximum f_NVMBUS
2. Maximum program and erase times are based on minimum f_NVMOP and maximum f_NVMBUS
3. t_cyc = 1 / f_NVMBUS
4. Typical value for a new device
Max⁽²⁾
32
1.05
130
35500
130
130
33500
26
285
26
2800
107
185
262
339
357
Unit⁽³⁾
MHz
MHz
ms
t_cyc
ms
ms
t_cyc
ms
µs
ms
t_cyc
µs
µs
µs
µs
µs
A.3.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
S12P-Family Reference Manual, Rev. 1.12
520
Freescale Semiconductor