MC9S12P128 Datasheet, PDF (518/564 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
A.3.1.8 Erase P-Flash Block (FCMD=0x09)
The time required to erase the P-Flash block is given by:
t_pmass ≈ 100100 ⋅ _f---_N---_V---¹-_M----_O---_P- + 67000 ⋅ _f---_N---_V----_M¹----_B---_U---_S
A.3.1.9 Erase P-Flash Sector (FCMD=0x0A)
The typical time to erase a 512-byte P-Flash sector is given by:
t_pera
≈
20020
⋅
---------¹---------
f _NVMOP
+
700
⋅
----------¹----------
f _NVMBUS
The maximum time to erase a 512-byte P-Flash sector is given by:
t_pera
≈
20020
⋅
---------¹---------
f _NVMOP
+
1400
⋅
----------¹----------
f _NVMBUS
A.3.1.10 Unsecure Flash (FCMD=0x0B)
The maximum time required to erase and unsecure the Flash is given by:
for 128 Kbyte P-Flash and 4 Kbyte D-Flash
t_uns
≈
100100
⋅
---------¹---------
f _NVMOP
+
70000
⋅
----------¹----------
f _NVMBUS
A.3.1.11 Verify Backdoor Access Key (FCMD=0x0C)
The maximum verify backdoor access key time is given by:
t = 400 ⋅ _f---_N---_V----_M¹----_B---_U---_S
A.3.1.12 Set User Margin Level (FCMD=0x0D)
The maximum set user margin level time is given by:
t
=
350
⋅
----------¹----------
f _NVMBUS
S12P-Family Reference Manual, Rev. 1.12
518
Freescale Semiconductor