HD64F3644PV Datasheet, PDF (187/551 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 6 ROM
Table 6.18 Flash Memory AC Characteristics
V_CC = 3.0 V to 5.5 V, AV_CC = 3.0 V to 5.5 V, AV_REF = 3.0 V to AV_CC, V_SS = AV_SS = 0 V,
V_PP = 12.0 V ±0.6 V
T_a = –20°C to +75°C (regular specifications), T_a = –40°C to +85°C (wide-range specifications)
Item
Symbol Min Typ Max Unit Test Conditions
Programming time^*1*2
Erase time^*1*3
tP

50
1000 µs
tE

1
30
s
Reprogramming capability
NWEC


100 Times
Verify setup time 1^*1
tVS1
4


µs
Verify setup time 2^*1
tVS2
2


µs
Flash memory read setup time^*4 tFRS
50


µs
VCC ≥ 4.5 V
100 

VCC < 4.5 V
Notes: 1. Follow the program/erase algorithms shown in section 6 when making the settings.
2. Indicates the programming time per byte (the time during which the P bit is set in the
flash memory control register (FLMCR)). Does not include the program-verify time.
3. Indicates the time to erase all blocks (32 kB) (the time during which the E bit is set in
FLMCR). Does not include the prewrite time before erasing of the erase-verify time.
4. After powering on when using an external clock, when the programming voltage (VPP) is
switched from 12 V to VCC, an interval at least equal to the read setup time must be
allowed to elapse before reading the flash memory.
When VPP is released, this specifies the setup time from the point at which the VPP
voltage reaches the VCC + 2 V level until the flash memory is read.
Rev. 6.00 Sep 12, 2006 page 165 of 526
REJ09B0326-0600