HD64F3644PV Datasheet, PDF (175/551 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 6 ROM
High-Speed, High-Reliability Programming: Unused areas of the flash memory in the
H8/3644F, H8/3643F, or H8/3642AF contain H'FF data (initial value). The flash memory uses a
high-speed, high-reliability programming procedure. This procedure provides higher programming
speed without subjecting the device to voltage stress and without sacrificing the reliability of the
programmed data.
Figure 6.18 shows the basic high-speed, high-reliability programming flowchart. Tables 6.15 and
6.16 list the electrical characteristics during programming.
Start
Set V_PP = 12.0 V ±0.6 V
Address = 0
n=0
n+1→n
Program setup command
Program command
Wait (25 µs)
Program-verify command
Address + 1 → address
No
Wait (6 µs)
Verify?
OK
NG
No
n = 20?
Last address?
Yes
Yes
Set V_PP = V_CC
End
Error
Figure 6.18 High-Speed, High-Reliability Programming
Rev. 6.00 Sep 12, 2006 page 153 of 526
REJ09B0326-0600