HD64F3644PV Datasheet, PDF (186/551 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 6 ROM
the 0 or 1 status of this bit. A byte data comparison is necessary to check whether 12V is
being applied. The relevant coding is shown below.
.
.
LABEL1: MOV.B @H'FF80, R1L
CMP.B #H'FF, R1L
BEQ LABEL1
.
.
.
Sample program for detection of 12 V application to FV_PP (user
mode)
Table 6.17 Flash Memory DC Characteristics
V_{CC =} 3.0 V to 5.5 V, AV_{CC =} 3.0 V to 5.5 V, AV_{REF =} 3.0 V to AV_CC, V_SS = AV_SS = 0 V,
V_PP = 12.0 V ±0.6 V
T_a = –20°C to +75°C (regular specifications), T_a = –40°C to +85°C (wide-range specifications)
Item
Symbol Min Typ Max Unit Test Conditions
High voltage (12 V) FVPP, TEST VH
application criterion
level^*
VCC + 2 
11.4 V
FVPP current
Read
IPP
Program


10
µA VPP = 2.7 to 5.5 V

10
20
mA VPP = 12.6 V

20 40 mA
Erase

20 40 mA
Note: * The high voltage application criterion level is as shown in the table above, but a setting
of 12.0 V ±0.6 V should be made in boot mode and when programming and erasing
flash memory.
Rev. 6.00 Sep 12, 2006 page 164 of 526
REJ09B0326-0600