MC68HC908GT16 Datasheet, PDF (181/412 Pages) Motorola, Inc – Microcontrollers

FLASH Memory
FLASH Mass Erase Operation
11.6 FLASH Mass Erase Operation
Use this step-by-step procedure to erase entire FLASH memory to read
as logic 1:
1. Set both the ERASE bit, and the MASS bit in the FLASH control
register.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address⁽¹⁾ within the FLASH
memory address range.
4. Wait for a time, t_NVS (minimum 10 µs)
5. Set the HVEN bit.
6. Wait for a time, t_MErase (minimum 4 ms)
7. Clear the ERASE bit.
8. Wait for a time, t_NVHL (minimum 100 µs)
9. Clear the HVEN bit.
10. After a time, t_RCV (minimum 1 µs), the memory can be accessed
again in read mode.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
1. When in monitor mode, with security sequence failed (see 15.5 Security), write to the FLASH
block protect register instead of any FLASH address.
MC68HC908GT16 • MC68HC908GT8 — Rev. 2
MOTOROLA
FLASH Memory
Technical Data
181