MC9S12NE64V1 Datasheet, PDF (533/554 Pages) Freescale Semiconductor, Inc – MC9S12NE64V1 Data Sheet

FLASH NVM Electrical Characteristics
A.15.1.4 Mass Erase
Erasing a NVM block takes:
t_mass ≈ 20000 ⋅ _f--N----_V----1_M-----_O----_P--
The setup times can be ignored for this operation.
Table A-25. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min Typ Max Unit
1
D External oscillator clock
2
D Bus frequency for programming or erase
operations
f_NVMOSC
0.5
f_NVMBUS
1
50 ¹
MHz
MHz
3
D Operating frequency
f_NVMOP
150
200
kHz
4
P Single Word programming time
t_swpgm
46 ²
74.5 ³
µs
5
D FLASH burst programming consecutive word
t_bwpgm
20.4²
31³
µs
6
D FLASH burst programming time for 32 words
t_brpgm
678.4²
1035.5³ µs
7
P Sector erase time
t_era
20 ⁴
26.7³
ms
8
P Mass erase time
t_mass
100⁴
133³
ms
9
D Blank check time FLASH per block
t _check
11 ⁵
32778 ⁶ t_cyc
1 _{Restrictions for oscillator in crystal mode apply!}
2 _{Minimum programming times are achieved under maximum NVM operating frequency f NVMOP and maximum bus}
frequency f_bus.
3 _{Maximum erase and programming times are achieved under particular combinations of f NVMOP and bus frequency f bus.}
4 _{Minimum Erase times are achieved under maximum NVM operating frequency f NVMOP.}
5 _{Minimum time, if first word in the array is not blank}
6 _{Maximum time to complete check on an erased block.}
A.15.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at < 2 ppm defects over lifetime
at the operating conditions noted.
A program/erase cycle is specified as two transitions of the cell value from erased → programmed →
erased, 1 → 0 → 1.
MC9S12NE64 Data Sheet, Rev. 1.1
Freescale Semiconductor
533