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MC68HC908AS32A Datasheet, PDF (268/280 Pages) Freescale Semiconductor, Inc – Microcontrollers
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Electrical Specifications
19.11.2 EEPROM Memory Characteristics
Characteristic
EEPROM programming time per byte
EEPROM erasing time per byte
EEPROM erasing time per block
EEPROM erasing time per bulk
EEPROM programming voltage discharge period
Number of programming operations to the same EEPROM byte
before erase(1)
EEPROM write/erase cycles @ 10 ms write time
EEPROM data retention after 10,000 write/erase cycles
EEPROM programming maximum time to AUTO bit set
EEPROM erasing maximum time to AUTO bit set
Symbol
tEEPGM
tEEBYTE
tEEBLOCK
tEEBULK
tEEFPV
—
—
—
—
—
Min
10
10
10
10
100
—
10,000
15
—
—
Max
—
—
—
—
—
8
—
—
500
8
Unit
ms
ms
ms
ms
µs
—
Cycles
Years
µs
ms
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must be
erased before it can be programmed again.
19.11.3 FLASH Memory Characteristics
Characteristic
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
<1 K cycles
>1 K cycles
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance(4)
FLASH data retention time(5)
Symbol
—
fRead(1)
tErase
tMErase
tNVS
tNVH
tNVHL
tPGS
tPROG
tRCV(2)
tHV(3)
—
—
Min
1
0
0.9
3.6
4
10
5
100
5
30
1
—
10 k
15
Typ
—
—
1
4
—
—
—
—
—
—
—
—
100 k
100
Max
Unit
—
MHz
8M
Hz
1.1
ms
5.5
—
ms
—
µs
—
µs
—
µs
—
µs
40
µs
—
µs
4
ms
—
Cycles
—
Years
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
clearing HVEN to 0.
3. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG x 64) ≤ tHV maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
Endurance, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC908AS32A Data Sheet, Rev. 2.0
268
Freescale Semiconductor
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