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PIC18F47J53 Datasheet, PDF (529/586 Pages) Microchip Technology – 28/44-Pin, High-Performance USB Microcontrollers with nanoWatt XLP Technology
PIC18F47J53 FAMILY
TABLE 31-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Program Flash Memory
D130 EP Cell Endurance
10K
—
— E/W -40C to +85C
D131 VPR VDDcore for Read
VMIN
—
2.75 V VMIN = Minimum operating
voltage
D132B VPEW VDDCORE for Self-Timed Erase or 2.25
—
2.75 V
Write
D133A TIW Self-Timed Write Cycle Time
—
2.8
—
ms 64 bytes
D133B TIE
Self-Timed Block Erase Cycle
Time
—
33.0
—
ms
D134 TRETD Characteristic Retention
20
—
— Year Provided no other
specifications are violated
D135 IDDP Supply Current during
Programming
—
3
— mA
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
TABLE 31-2: COMPARATOR SPECIFICATIONS
Operating Conditions: 3.0V < VDD < 3.6V, -40°C < TA < +85°C (unless otherwise stated)
Param
No.
Sym
Characteristics
Min
Typ
Max
Units Comments
D300
D301
D302
300
301
Note 1:
VIOFF Input Offset Voltage
—
+5
+25
mV
VICM
Input Common Mode Voltage
0
—
VDD
V
VIRV
Internal Reference Voltage
0.57 0.60
0.63
V
CMRR Common Mode Rejection Ratio
55
—
—
dB
TRESP Response Time(1)
—
150
400
ns
TMC2OV Comparator Mode Change to
Output Valid
—
—
10
s
Response time measured with one comparator input at VDD/2, while the other input transitions from VSS to
VDD.
TABLE 31-3: VOLTAGE REFERENCE SPECIFICATIONS
Operating Conditions: 3.0V < VDD < 3.6V, -40°C < TA < +85°C (unless otherwise stated)
Param
No.
Sym
Characteristics
Min Typ Max Units
Comments
D310
D311
D312
310
Note 1:
VRES
Resolution
VDD/24 — VDD/32 LSb
VRAA Absolute Accuracy
—
—
1/2 LSb
VRUR
TSET
Unit Resistor Value (R)
Settling Time(1)
—
2k
—

—
—
10
s
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
 2010 Microchip Technology Inc.
Preliminary
DS39964B-page 529