PIC18F47J53 Datasheet, PDF (115/586 Pages) Microchip Technology – 28/44-Pin, High-Performance USB Microcontrollers with nanoWatt XLP Technology

PIC18F47J53 FAMILY
7.5 Writing to Flash Program Memory
The programming block is 32 words or 64 bytes.
Programming one word or 2 bytes at a time is also
supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 64 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte, the
TBLWT instruction may need to be executed 64 times for
each programming operation (if WPROG = 0). All of the
table write operations will essentially be short writes
because only the holding registers are written. At the
end of updating the 64 holding registers, the EECON1
register must be written to in order to start the
programming operation with a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
The on-chip timer controls the write time. The
write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
Note 1: Unlike previous PIC^® devices, devices of
the PIC18F47J53 family do not reset the
holding registers after a write occurs. The
holding registers must be cleared or
overwritten before a programming
sequence.
2: To maintain the endurance of the program
memory cells, each Flash byte should not
be programmed more than once between
erase operations. Before attempting to
modify the contents of the target cell a
second time, an erase of the target page,
or a bulk erase of the entire memory, must
be performed.
FIGURE 7-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
TABLAT
Write Register
8
8
8
TBLPTR = xxxxx0
TBLPTR = xxxxx1
TBLPTR = xxxxx2
Holding Register
Holding Register
Holding Register
8
TBLPTR = xxxx3F
Holding Register
Program Memory
7.5.1
FLASH PROGRAM MEMORY WRITE
SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1. Read 1024 bytes into RAM.
2. Update data values in RAM as necessary.
3. Load the Table Pointer register with address
being erased.
4. Execute the erase procedure.
5. Load the Table Pointer register with the address
of the first byte being written, minus 1.
6. Write the 64 bytes into the holding registers with
auto-increment.
7. Set the WREN bit (EECON1<2>) to enable byte
writes.
8. Disable interrupts.
9. Write 55h to EECON2.
10. Write 0AAh to EECON2.
11. Set the WR bit; this will begin the write cycle.
12. The CPU will stall for the duration of the write for
TIW (see parameter D133A).
13. Re-enable interrupts.
14. Repeat steps 6 through 13 until all 1024 bytes
are written to program memory.
15. Verify the memory (table read).
An example of the required code is provided in
Example 7-3 on the following page.
Note:
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 64 bytes in
the holding register.
 2010 Microchip Technology Inc.
Preliminary
DS39964B-page 115