MC9S12KG128 Datasheet, PDF (580/600 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
A.6.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE
All values shown in Table A-17 are target values and subject to further
extensive characterization.
Table A-17. NVM Reliability Characteristics¹
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1 C Data retention after 10,000 program/erase cycles at t_NVMRET
15
an average junction temperature of T_Javg ≤ 85°C
2 C Data retention with <100 program/erase cycles at an
20
average junction temperature T_Javg ≤ 85°C
100²
100²
—
Years
—
3 C Flash Number of program/erase cycles
(–40°C ≤ T_J ≤ 0°C)
(0°C ≤ T_J ≤ 140°C)
n_FLPE
10,000
10,000
—
100,000³
—
Cycles
—
4 C EEPROM number of Program/Erase cycles
(–40°C ≤ T_J ≤ 0°C)
(0°C < T_J ≤ 140°C)
n_EEPE
10,000
100,000
—
300,000³
—
Cycles
—
Cycles
1 _{TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive}
application.
2 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to}
25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618.
3 _{Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can}
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to
Engineering Bulletin EB619.
MC9S12KG128 Data Sheet, Rev. 1.15
580
Freescale Semiconductor