SAM7S256_14 Datasheet, PDF (569/775 Pages) ATMEL Corporation – ARM-based Flash MCU

37.4.3 Crystal Characteristics
Table 37-11. Crystal Characteristics
Symbol
Parameter
ESR
Equivalent Series Resistor Rs
C_M
C_SHUNT
Motional capacitance
Shunt capacitance
Conditions
Min
Typ
Max
Unit
Fundamental @3 MHz
Fundamental @8 MHz
Fundamental @16 MHz
Fundamental @20 MHz
200
100
W
80
50
8
fF
7
pF
37.4.4 XIN Clock Characteristics
Table 37-12. XIN Clock Electrical Characteristics
Symbol
Parameter
Conditions
Min
Max
Units
1/(t_CPXIN)
t_CPXIN
t_CHXIN
t_CLXIN
t_CLCH
t_CHCL
C_IN
R_IN
V_{XIN_IL}
V_{XIN_IH}
XIN Clock Frequency
XIN Clock Period
XIN Clock High Half-period
XIN Clock Low Half-period
Rise Time
Fall Time
XIN Input Capacitance
XIN Pull-down Resistor
V_XIN Input Low-level Voltage
V_XIN Input High-level Voltage
(1)
50.0
MHz
(1)
20.0
ns
(1)
8.0
ns
(1)
8.0
ns
(1)
400
(1)
400
(1)
46
pF
(1)
500
kΩ
(1)
-0.3
0.3 x V_DDPLL
V
(1)
0.7 x V_DDPLL
1.95
V
I_DDBP
Bypass Current Consumption
(1)
15
µW/MHz
Note: 1. These characteristics apply only when the Main Oscillator is in bypass mode (i.e., when MOSCEN = 0 and OSCBYPASS = 1
in the CKGR_MOR register, see the Clock Generator Main Oscillator Register.
Figure 37-2. XIN Clock Timing
t_CPXIN
V_{XIN_IH}
V_{XIN_IL}
t_CLCH
t_CHXIN
t_CHCL
t_CPXIN
t_CPXIN
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
569