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SAM7S256_14 Datasheet, PDF (560/775 Pages) ATMEL Corporation – ARM-based Flash MCU
Table 37-4. Brownout Detector Characteristics
Symbol Parameter
Conditions
VBOT-
VHYST
IDD
Threshold Level
Hysteresis
Current Consumption
Falling edge
VHYST = VBOT+ - VBOT-
BOD on (GPNVM0 bit active)
BOD off (GPNVM0 bit inactive)
TSTART
Startup Time
Table 37-5.
Symbol
TPU
ISB
ICC
DC Flash Characteristics SAM7S64/321/32/161/16
Parameter
Conditions
Power-up delay
Standby current
@25°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
@85°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Active current
Random Read @ 30MHz
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Write
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Table 37-6.
Symbol
TPU
ISB
ICC
DC Flash Characteristics SAM7S512/256/128
Parameter
Conditions
Power-up delay
Standby current
@25°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
@85°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Active current
Random Read @ 30MHz
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Write
(one bank for SAM7S512)
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Min
Typ
Max Units
1.65
1.68
1.71
V
50
65
mV
12
18
µA
1
µA
100
200
µs
Min
Max
Units
45
µS
4
µA
7
10
µA
30
3.0
mA
0.4
400
µA
2.2
mA
Min
Max
Units
45
µS
5
µA
10
10
µA
120
3.0
mA
0.8
400
µA
5.5
mA
37.3 Power Consumption
• Typical power consumption of PLLs, Slow Clock and Main Oscillator.
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
560