N25Q032A13E1241F Datasheet, PDF (88/153 Pages) Micron Technology – 32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface

Instructions
N25Q032 - 3 V
Table 21. Instruction set: DIO-SPI protocol
Instruction
Description
One-byte
Instruction
Code (BIN)
One-byte
Instruction
Code (HEX)
Address
bytes
Dummy
clock
cycle
Data
bytes
MIORDID Multiple I/O read identification
1010 1111 AFh
0
0
1 to 3
RDSFDP Read Serial Flash Discovery Parameter 01011010 5Ah
3
8 ⁽¹⁾
1 to ∞
0000 1011 0Bh
3
8 ⁽¹⁾
1 to ∞
DCFR
Dual Command Fast Read
0011 1011 3Bh
3
8⁽¹⁾
1 to ∞
1011 1011 BBh
3
8 ⁽¹⁾
1 to ∞
ROTP
Read OTP
0100 1011 4Bh
3
8 ⁽¹⁾
1 to 65
WREN
Write Enable
0000 0110 06h
0
0
0
WRDI
Write Disable
0000 0100 04h
0
0
0
0000 0010 02h
3
0
1 to 256
DCPP
Dual Command Page Program
1010 0010 A2h
3
0
1 to 256
POTP
SSE
SE
BE
Program OTP
SubSector Erase
Sector Erase
Bulk Erase
1101 0010 D2h
3
0
1 to 256
0100 0010 42h
3
0
1 to 65
0010 0000 20h
3
0
0
1101 1000 D8h
3
0
0
1100 0111 C7h
0
0
0
PER
Program/Erase Resume
PES
Program/Erase Suspend
RDSR
Read Status Register
WRSR
Write Status Register
RDLR
Read Lock Register
WRLR
Write to Lock Register
RFSR
Read Flag Status Register
CLFSR Clear Flag Status Register
RDNVCR Read NV Configuration Register
0111 1010 7Ah
0111 0101 75h
0000 0101 05h
0000 0001 01h
1110 1000 E8h
1110 0101 E5h
0111 0000 70h
0101 0000 50h
1011 0101 B5h
0
0
0
0
0
0
0
0
1 to ∞
0
0
1
3
0
1 to ∞
3
0
1
0
0
1 to ∞
0
0
0
0
0
2
WRNVCR Write NV Configuration Register
1011 0001 B1h
RDVCR Read Volatile Configuration Register 1000 0101 85h
WRVCR Write Volatile Configuration Register 1000 0001 81h
RDVECR
Read Volatile Enhanced Configuration
Register
0110 0101
65h
WRVECR
Write Volatile Enhanced Configuration
Register
0110 0001
61h
0
0
2
0
0
1 to ∞
0
0
1
0
0
1 to ∞
0
0
1
1) The number of Dummy Clock cycles is configurable by the user
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