N25Q032A13E1241F Datasheet, PDF (139/153 Pages) Micron Technology – 32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface

N25Q032 - 3 V
DC and AC parameters
Table 31. AC Characteristics (page 2 of 2)
Symbol
Alt.
Parameter
Min
Typ⁽²⁾
Max ^Unit
tWNVCR
tWVCR
tWRVECR
tPP⁽⁷⁾
Write non volatile configuration register
cycle time
Write volatile configuration register cycle
time
Write volatile enhanced
configurationregister cycle time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time Vpp=VPPH (256
Bytes)
Program OTP cycle time (64 bytes)
0.2
3
s
40
ns
40
ns
0.5
5
ms
int(n/8) ×
0.015⁽⁸⁾
5
0.4
5
0.2
ms
tSSE
Subsector erase cycle time
0.3
3
s
Sector Erase Cycle Time
0.7
3
s
tSE
Sector Erase Cycle Time Vpp=VPPH
0.6
3
Bulk erase cycle time
30
60
s
tBE
Bulk erase cycle time (with VPP=VPPH)
25
60
s
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Typical values given for TA = 25 °C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to '1'.
6. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure)
is known.
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 104. Reset AC waveforms while a program or erase cycle is in progress
S
Reset
tSHRV
tRLRH
tRHSL
See Table 32.: Reset Conditions.
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