N25Q032A13E1241F Datasheet, PDF (150/153 Pages) Micron Technology – 32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface

Ordering information
16 Ordering information
N25Q032 - 3 V
Table 41. Ordering information scheme
Example:
N25Q032 A 1 3 E F8 4 0 E
Device type
N25Q = serial Flash memory, Quad I/O, XiP
Device density
032 = 032 Mbit
Technology
A = 65 nm
Feature set
1 = Byte addressability, Hold pin, Numonyx XiP
2 = Byte addressability, Hold pin, Basic XiP
3 = Byte addressability, Reset pin, Numonyx XiP
4 = Byte addressability, Reset pin, Basic XiP
Operating voltage
3 = VCC = 2.7 V to 3.6 V
Block Structure
E = Uniform (no boot sectors)
Package
F4 = UFDFPN8 4 x 3 mm (MLP8)
F6 = VDFPN8 6 x 5 mm (MLP8)
F8 = VDFPN8 8 x 6 mm (MLP8)
SC = SO8N (SO8 Narrow 150 mils body width)
SE = SO8W (SO8 Wide 208 mils body width)
SF = SO16W (SO16 Wide 300 mils body width)
12 = TBGA24 6 x 8 mm
Temperature and test flow
4 = Industrial temperature range, –40 to 85 °C: Device tested with standard test flow
A = Automotive temperature range, –40 to 125 °C; Device tested with high reliability
certified test flow
H = Industrial temperature range, –40 to 85 °C; Device tested with high reliability
certified test flow
Security features ⁽¹⁾
0 = No extra security
Packing options
E = Tray packing
F = Tape and reel packing
G = Tube packing
1. Additional secure options are available upon request. For security features options please refer to AN:309025
Note:
All packages are RoHS compliant
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
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