PIC18F2331 Datasheet, PDF (353/396 Pages) Microchip Technology – 28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High Performance PWM and A/D

PIC18F2331/2431/4331/4431
TABLE 25-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D110
D112
D113
VPP
IPP
IDDP
Internal Program Memory
Programming Specifications⁽¹⁾
Voltage on MCLR/VPP pin
Current into MCLR/VPP pin
Supply Current during
Programming
9.00
—
—
— 13.25 V (Note 3)
—
300 µA
—
1
mA
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M 10M
— E/W -40°C to +85°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K
—
E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5
V Using ICSP port
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5
V Using ICSP port
or Write
D132B VPEW VDD for Self-timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
—
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
—
ms VDD > 4.5V
D133A TIW Self-timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of Table Write
instructions.
2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if low-voltage programming is disabled.
 2003 Microchip Technology Inc.
Preliminary
DS39616B-page 351