HD64F3687GHV Datasheet, PDF (467/566 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 22 Electrical Characteristics
Item
Test
Symbol Condition
Values
Min. Typ. Max. Unit
Erasing
Wait time after setting SWE x
bit*¹
1
—
—
µs
Wait time after setting ESU y
bit*¹
100 —
—
µs
Wait time after setting E
z
bit*¹*⁶
10
—
100 ms
Wait time after clearing E α
bit*¹
10
—
—
µs
Wait time after clearing ESU β
bit*¹
10
—
—
µs
Wait time after setting EV γ
bit*¹
20
—
—
µs
Wait time after
ε
dummy write*¹
2
—
—
µs
Wait time after clearing EV η
bit*¹
4
—
—
µs
Wait time after clearing SWE θ
bit*¹
Maximum erase count *¹*⁶*⁷ N
100 —
—
—
—
µs
120 Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (t_P(max.)) = wait time after P bit setting (z) ×
maximum programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3 so that it does not exceed the programming time maximum value (t_P(max.)). The
wait time after setting P bit (z1, z2) should be changed as follows according to the value
of the programming count (n).
Programming count (n)
1≤n≤6
z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Erase time maximum value (t_E(max.)) = wait time after E bit setting (z) × maximum
erase count (N)
7. Set the maximum erase count (N) according to the actual set value of (z) so that it does
not exceed the erase time maximum value (t_E(max.)).
Rev. 3.00 Sep. 10, 2007 Page 433 of 528
REJ09B0216-0300