HD64F3687GHV Datasheet, PDF (466/566 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 22 Electrical Characteristics
22.2.6 Flash Memory Characteristics
Table 22.8 Flash Memory Characteristics
V_CC = 4.5 to 5.5 V, V_SS = 0.0 V, T_a = -20 to +75°C/-40 to +85°C, unless otherwise indicated.
Item
Test
Symbol Condition
Programming time (per 128 bytes)*¹*²*⁴
t_P
Erase time (per block) *¹*³*⁶
t_E
Reprogramming count
N_WEC
Programming Wait time after setting SWE x
bit*¹
Wait time after setting PSU y
bit*¹
Wait time after setting P bit z1
1≤n≤6
*¹*⁴
z2
7 ≤ n ≤ 1000
z3
Additional-
programming
Wait time after clearing P α
bit*¹
Wait time after clearing PSU β
bit*¹
Wait time after setting PV γ
bit*¹
Wait time after dummy
ε
write*¹
Wait time after clearing PV η
bit*¹
Wait time after clearing SWE θ
bit*¹
Maximum programming
N
count *¹*⁴*⁵
Min.
—
—
1000
1
50
28
198
8
5
5
4
2
2
100
—
Values
Typ. Max.
7.0
200.0
10.0 20.0
10000 —
—
—
Unit
ms
ms
Times
µs
—
—
µs
30
32
µs
200 202 µs
10
12
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
1000 Times
Rev. 3.00 Sep. 10, 2007 Page 432 of 528
REJ09B0216-0300