HD64F3687GHV Datasheet, PDF (141/566 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 7 ROM
Section 7 ROM
The features of the flash memory built into this LSI are summarized below.
• Programming/erase methods
 The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. To erase the entire flash memory, each block must be erased in turn.
• Reprogramming capability
 The flash memory can be reprogrammed up to 1,000 times (Min.).
• On-board programming
 On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
• Programmer mode
 Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
• Automatic bit rate adjustment
 For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
• Programming/erasing protection
 Sets software protection against flash memory programming/erasing.
• Power-down mode
 Operation of the power supply circuit can be partly halted in subactive mode. As a result,
flash memory can be read with low power consumption.
7.1 Block Configuration
Figure 7.1 shows the block configuration of flash memory of each product model. The thick lines
indicate erasing units, the narrow lines indicate programming units, and the values are addresses.
Erasing is performed in erasing units shown in these figures. Programming is performed in 128-
byte units starting from an address with lower eight bits H'00 or H'80.
ROM3560A_000120030300
Rev. 3.00 Sep. 10, 2007 Page 107 of 528
REJ09B0216-0300