PIC18F6525_13 Datasheet, PDF (335/400 Pages) Microchip Technology – 64/80-Pin High-Performance, 64-Kbyte Enhanced Flash Microcontrollers with A/D

PIC18F6525/6621/8525/8621
TABLE 27-4: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  TA  +125°C for extended
Param
No.
Sym
Characteristic
Internal Program Memory
Programming Specifications
Min Typ† Max Units
Conditions
D110 VPP Voltage on MCLR/VPP pin
9.00
— 13.25 V (Note 2)
D112 IPP Current into MCLR/VPP pin
—
—
300 A
D113 IDDP Supply Current during
Programming
—
—
1.0 mA
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
— E/W -40C to +85C
10K 100K — E/W -40C to +125C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
1M 10M
100K 1M
— E/W -40°C to +85°C
— E/W -40C to +125C
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40C to +85C
1K
10K
— E/W -40C to +125C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5
V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5
V Using ICSP port
or Write
D132B VPEW VDD for Self-Timed Write and
Row Erase
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
—
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
—
ms VDD > 4.5V
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
2: Required only if Low-Voltage Programming is disabled.
 2003-2013 Microchip Technology Inc.
DS39612C-page 335