C8051F52X_12 Datasheet, PDF (33/221 Pages) Silicon Laboratories – 8/4/2 kB ISP Flash MCU Family

C8051F52x/F53x
Table 2.9. Flash Electrical Characteristics
V_DD = 1.8 to 2.75 V; –40 to +125 ºC unless otherwise specified
Parameter
Conditions
Min
Typ Max
Units
Flash Size
’F520/0A/1/1A and ’F530/0A/1/1A
’F523/3A/4/4A and ’F533/3A/4/4A
’F526/6A/7/7A and ’F536/6A/7/7A
Endurance²
V_DD  V_RST-HIGH1
Erase Cycle Time
7680
4096
2048
20 k
27
—
—
bytes
150 k — Erase/Write
32 38
ms
Write Cycle Time
V_DD
Write/Erase Operations
57
65 74
µs
V_RST-HIGH1 —
—
V
Notes:
1. See Table 2.8 on page 32 for the V_RST-HIGH specification.
2. For –I (industrial Grade) parts, flash should be programmed (erase/write) at a minimum temperature of 0 °C
for reliable flash operation across the entire temperature range of –40 to +125 °C. This minimum
programming temperature does not apply to –A (Automotive Grade) parts.
Table 2.10. Port I/O DC Electrical Characteristics
V_REGIN = 2.7 to 5.25 V, –40 to +125 °C unless otherwise specified
Parameters
Conditions
Output High I_OH = –3 mA, Port I/O push-pull
Voltage
I_OH = –10 µA, Port I/O push-pull
I_OH = –10 mA, Port I/O push-pull
Output Low
Voltage
V_REGIN = 2.7 V:
I_OL = 70 µA
I_OL = 8.5 mA
V_REGIN = 5.25 V:
I_OL = 70 µA
I_OL = 8.5 mA
Input High
Voltage
Input Low 
Voltage
Input
Leakage 
Current
Weak Pullup Off
C8051F52xA/53xA:
Weak Pullup On, V_IN = 0 V; V_REGIN = 1.8 V
Min
Typ
V_REGIN – 0.4
—
V_REGIN – 0.02
—
—
V_REGIN – 0.7
Max
—
—
—
Units
V
—
—
—
—
—
—
—
—
V_REGIN x 0.7
—
45
550
mV
40
400
—
V
—
—
V_REGIN x V
0.3
—
—
±2
—
5
15
µA
C8051F52x/52xA/53x/53xA:
Weak Pullup On, V_IN = 0 V; V_REGIN = 2.7 V
—
Weak Pullup On, V_IN = 0 V; V_REGIN = 5.25 V
—
20
50
65
115
Rev. 1.4
33