C8051F52X_12 Datasheet, PDF (29/221 Pages) Silicon Laboratories – 8/4/2 kB ISP Flash MCU Family

C8051F52x/F53x
Table 2.4. Temperature Sensor Electrical Characteristics
V_DD = 2.1 V, V_REF = 1.5 V (REFSL=0), –40 to +125 °C unless otherwise specified.
Parameter
Linearity¹
Gain¹
Gain Error²
Offset¹
Offset Error²
Tracking Time
Power Supply Current
Conditions
Temp = 0 °C
Temp = 0 °C
Min Typ Max
— 0.1 —
— 3.33 —
— ±100 —
— 890 —
— ±15 —
12 — —
— 17 —
Notes:
1. Includes ADC offset, gain, and linearity variations.
2. Represents one standard deviation from the mean.
Units
°C
mV/°C
µV/°C
mV
mV
µs
µA
Table 2.5. Voltage Reference Electrical Characteristics
V_DD = 2.1 V; –40 to +125 °C unless otherwise specified.
Parameter
Conditions
Min Typ Max Units
Internal Reference (REFBE = 1)
Output Voltage
I_DD  1 mA; No load on VREF pin and all
other GPIO pins.
25 °C ambient (REFLV = 0)
1.45 1.5 1.55 V
25 °C ambient (REFLV = 1), V_DD = 2.6 V _{2.15 2.2} 2.25
V_REF Short-Circuit Current
V_REF Temperature Coefficient
Load Regulation
Load = 0 to 200 µA to GND
— 2.5 —
mA
— 33 — ppm/°C
— 10 — ppm/µA
V_REF Turn-on Time 1
V_REF Turn-on Time 2
Power Supply Rejection
4.7 µF, 0.1 µF bypass
0.1 µF bypass
— 21 —
— 230 —
— 2.1 —
ms
µs
mV/V
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Bias Generators
Sample Rate = 200 ksps; V_REF = 1.5 V
0
— V_DD
V
— 2.4 —
µA
ADC Bias Generator
BIASE = 1
Power Consumption (Internal)
— 22 —
µA
— 35 —
µA
Rev. 1.4
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