HD64F7144F50V Datasheet, PDF (842/932 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

26. Electrical Characteristics
26.5 Flash Memory Characteristics
Table 26.18 shows flash memory characteristics.
Table 26.18 Flash Memory Characteristics
Conditions: V_CC = PLLV_CC =3.3 V ± 0.3 V, AV_CC = 3.3 V ± 0.3 V, AV_CC = V_CC ± 0.3 V,
AV_ref = 3.0 V to AV_CC , V_SS = PLLV_SS = AV_SS = 0 V, T_a = –20°C to +75°C
(regular specifications*⁶), T_a = –40°C to +85°C (wide-range specifications*⁶),
When programming or erasing flash memory, T_a = –20°C to +75°C.
Item
Programming time^{*1, *2, *4}
Erase time^{*1, *3, *5}
Reprogramming count
Symbol
t_P
t_E
N_WEC
N_WEC
Data retained time
t_DRP
Programming Wait time after SWE bit setting^*1 t_sswe
Wait time after PSU bit setting^*1 t_spsu
Wait time after P bit setting^{*1 *4}
t_sp30
t_sp200
t_sp10
Wait time after P bit clear^*1
t_cp
Wait time after PSU bit clear^*1
t_cpsu
Wait time after PV bit setting^*1
t_spv
Wait time after H'FF dummy write^*1 t_spvr
Wait time after PV bit clear^*1
t_cpv
Wait time after SWE bit clear^*1
t_cswe
Maximum programming count^{*1, *4} N
Min
⎯
⎯
100^*7
—
10^*9
1
50
28
198
8
5
5
4
2
2
100
⎯
Typ Max
10 200
100 1200
10000^*8 —
— 100
——
1
⎯
50 ⎯
30 32
200 202
10 12
5
⎯
5
⎯
4
⎯
2
⎯
2
⎯
100 ⎯
⎯ 1000
Unit
Remarks
ms/
128 bytes
ms/block
Times
Standard
product
Times
Wide
temperature-
range product
years
µs
µs
µs
Programming
time wait
µs
Programming
time wait
µs
Additional-
programming
time wait
µs
µs
µs
µs
µs
µs
Times
Rev.4.00 Mar. 27, 2008 Page 796 of 882
REJ09B0108-0400