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FLASH-2 Mass Erase Operation
5.5 FLASH-2 Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH-2 memory to read as logic 1:
1. Set both the ERASE bit and the MASS bit in the FLASH-2 Control Register (FL2CR).
2. Read the FLASH-2 Block Protect Register (FL2BPR).
3. Write to any FLASH-2 address within the FLASH-2 array with any data.
NOTE
If the address written to in Step 3 is within address space protected by the
FLASH-2 Block Protect Register (FL2BPR), no erase will occur.
4. Wait for a time, t_NVS.
5. Set the HVEN bit.
6. Wait for a time, t_MERASE.
7. Clear the ERASE bit.
8. Wait for a time, t _NVHL.
9. Clear the HVEN bit.
10. Wait for a time, t_RCV, after which the memory can be accessed in normal read mode.
NOTE
A. Programming and erasing of FLASH locations can not be performed by
code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address within
the FLASH array memory space such as the COP Control Register
(COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
Freescale Semiconductor
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