MC908AZ60ACFUER Datasheet, PDF (374/414 Pages) Freescale Semiconductor, Inc – To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information available, refer to:

Electrical Specifications
28.1.11 Timer Module Characteristics
Characteristic
Input Capture Pulse Width
Input Clock Pulse Width
Symbol
t_TIH, t_TIL
t_TCH, t_TCL
Min
125
(1/f_OP) + 5
Max
—
—
Unit
ns
ns
28.1.12 RAM Memory Characteristics
Characteristic
RAM Data Retention Voltage
Symbol
Min
V_RDR
0.7
Max
Unit
—
V
28.1.13 EEPROM Memory Characteristics
Characteristic
EEPROM Programming Time per Byte
EEPROM Erasing Time per Byte
EEPROM Erasing Time per Block
EEPROM Erasing Time per Bulk
EEPROM Programming Voltage Discharge Period
Number of Programming Operations to the Same EEPROM Byte
Before Erase⁽¹⁾
EEPROM Write/Erase Cycles @ 10 ms Write Time
EEPROM Data Retention After 10,000 Write/Erase Cycles
EEPROM Programming Maximum Time to ‘AUTO’ Bit Set
EEPROM Erasing Maximum Time to ‘AUTO’ Bit Set
Symbol
t_EEPGM
t_EEBYTE
t_EEBLOCK
t_EEBULK
t_EEFPV
—
—
—
—
—
Min
Max
Unit
10
—
ms
10
—
ms
10
—
ms
10
—
ms
100
—
μs
—
8
—
10,000
—
Cycles
10
—
Years
—
500
μs
—
8
ms
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must be erased before it can
be programmed again.
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
374
Freescale Semiconductor