MC68HC908EY16 Datasheet, PDF (36/278 Pages) Motorola, Inc – Microcontrollers

Memory
2.6.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
Address:
Read:
Write:
Reset:
$FE08
Bit 7
0
0
6
5
0
0
0
0
= Unimplemented
4
3
2
1
Bit 0
0
HVEN MASS ERASE PGM
0
0
0
0
0
Figure 2-3. FLASH Control Register (FLCR)
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can be set only if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 16-Kbyte FLASH array for mass or page erase operation.
1 = Mass erase operation selected
0 = Page erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
36
Freescale Semiconductor