T8207 Datasheet, PDF (142/158 Pages) Agere Systems – ATM Interconnect

CelXpres T8207
ATM Interconnect
Advance Data Sheet
September 2001
15 Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Table 127. Maximum Rating Parameters and Values
Parameter
Symbol
Min
Typ
dc Supply Voltage with Respect to Ground
VDD
—
—
Input Voltage Range¹
VI1
VSS – 0.3
—
Junction Temperature Range
TJ
–40
—
Storage Temperature
Tstg
Maximum Power Dissipation (package limit)²
PD
–60
—
—
—
1. Except for 5 V tolerant buffers where VIHmax = 5.5 V + 0.3 V.
2. Maximum power dissipation may be determined from the following equation: PD = (125 °C – TA)/22.5 °C/W.
Max
Unit
4.2
V
VDD + 0.3
V
125
°C
160
°C
2.44
W
16 Recommended Operating Conditions
Table 128. Recommended Operating Conditions
Parameter
Symbol
Min
dc Supply Voltage with Respect to Ground
VDD
3.0
Ambient Operating Temperature Range
TA
–40
Typ
Max
Unit
—
3.6
V
—
85
°C
17 Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Agere employs a human-body model (HBM)
and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage
thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been
adopted for the CDM. A standard HBM (resistance = 1500 Ω, capacitance = 100 pF) is widely accepted and can be
used for comparison. The HBM ESD threshold presented here was obtained by using these circuit parameters.
Table 129. HBM ESD Threshold
Device
T8207
Voltage (V)
2000
142
Agere Systems Inc.