M1A3P1000-1PQ208M Datasheet, PDF (84/212 Pages) Microsemi Corporation – Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

Military ProASIC3/EL DC and Switching Characteristics
Timing Characteristics
1.2 V DC Core Voltage
Table 2-107 • 1.2 V LVCMOS Low Slew
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V
Applicable to Pro I/O Banks for A3PE600L and A3PE3000L Only
Drive
Strength
2 mA
Speed
Grade
Std.
t_DOUT t_DP t_DIN t_PY t_PYS t_EOUT t_ZL t_ZH t_LZ t_HZ t_ZLS t_ZHS Units
0.80 12.61 0.05 2.65 3.75 0.52 12.10 9.50 5.11 4.66 14.31 11.71 ns
–1
0.68 10.72 0.05 2.25 3.19 0.44 10.30 8.08 4.35 3.97 12.17 9.96 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.
Table 2-108 • 1.2 V LVCMOS High Slew
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V
Applicable to Pro I/O Banks for A3PE600L and A3PE3000L Only
Drive
Strength
2 mA
Speed
Grade
Std.
t_DOUT
0.80
t_DP
5.16
t_DIN t_PY t_PYS t_EOUT
0.05 2.65 3.75 0.52
t_ZL
4.98
t_ZH t_LZ t_HZ
4.39 5.10 4.81
t_ZLS
7.19
t_ZHS
6.60
–1
0.68 4.39 0.05 2.25 3.19 0.44 4.24 3.74 4.34 4.09 6.11 5.61
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.
Unit
s
ns
ns
2-70
Revision 3