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M1A3P1000-1PQ208M Datasheet, PDF (15/212 Pages) Microsemi Corporation – Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
2 – Military ProASIC3/EL DC and Switching
Characteristics
General Specifications
Operating Conditions
Stresses beyond those listed in Table 2-1 may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
absolute maximum ratings are stress ratings only; functional operation of the device at these or any other
conditions beyond those listed under the Recommended Operating Conditions specified in Table 2-2 on
page 2-2 is not implied.
Table 2-1 • Absolute Maximum Ratings1
Symbol
Parameter
Limits
Units
VCC
DC core supply voltage
–0.3 to 1.65
V
VJTAG JTAG DC voltage
–0.3 to 3.75
V
VPUMP Programming voltage
–0.3 to 3.75
V
VCCPLL Analog power supply (PLL)
–0.3 to 1.65
V
VCCI DC I/O buffer supply voltage for
–0.3 to 3.75
V
A3PE600/3000L
DC output buffer supply voltage for
A3P250/A3P1000
VMV
DC input buffer supply voltage for
–0.3 to 3.75
V
A3P250/A3P1000
VI
I/O input voltage
–0.3 V to 3.6 V (when I/O hot insertion mode is enabled) V
–0.3 V to (VCCI + 1 V) or 3.6 V, whichever voltage is
lower (when I/O hot-insertion mode is disabled)
TSTG 2
TJ 2
Storage temperature
Junction temperature
–65 to +150
°C
+150
°C
Notes:
1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may
undershoot or overshoot according to the limits shown in Table 2-4 on page 2-7.
2. For flash programming and retention maximum limits, refer to Table 2-3 on page 2-3, and for recommended operating
limits, refer to Table 2-2 on page 2-2.
Revision 3
2-1