M1A3P1000-1PQ208M Datasheet, PDF (103/212 Pages) Microsemi Corporation – Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

Military ProASIC3/EL Low Power Flash FPGAs
Timing Characteristics
1.2 V DC Core Voltage
Table 2-161 • LVDS
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V
Applicable to Pro I/Os for A3PE600L and A3PE3000L Only
Speed Grade
Std.
t_DOUT
0.80
t_DP
1.87
t_DIN
0.05
t_PY
2.48
Units
ns
–1
0.68
1.59
0.05
2.11
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.
1.5 V DC Core Voltage
Table 2-162 • LVDS
Military-Case Conditions: T_J = 125°C, VCC = 1.425 V, Worst-Case VCCI = 2.3 V
Applicable to Pro I/Os for A3PE600L and A3PE3000L Only
Speed Grade
Std.
t_DOUT
0.61
t_DP
1.75
t_DIN
0.04
t_PY
2.18
Units
ns
–1
0.52
1.48
0.03
1.86
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.
Table 2-163 • LVDS
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V
Applicable to Advanced I/O Banks for A3P250 and A3P1000 Only
Speed Grade
Std.
t_DOUT
0.63
t_DP
2.07
t_DIN
0.05
t_PY
1.82
Units
ns
–1
0.54
1.76
0.04
1.55
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values.
Revision 3
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