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M1A3P1000-1PQ208M Datasheet, PDF (162/212 Pages) Microsemi Corporation – Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
Military ProASIC3/EL DC and Switching Characteristics
Embedded FlashROM Characteristics
CLK
tSU
tHOLD
tSU
tHOLD
tSU
tHOLD
Address
Data
A0
tCKQ2
D0
A1
tCKQ2
D0
tCKQ2
D1
Figure 2-56 • Timing Diagram
Timing Characteristics
Table 2-216 • Embedded FlashROM Access Time
Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.14 V for A3PE600L and
A3PE3000L
Parameter
Description
–1
Std.
Units
tSU
tHOLD
tCK2Q
FMAX
Note:
Address Setup Time
0.74
0.87
ns
Address Hold Time
0.00
0.00
ns
Clock to Out
16.18
19.02
ns
Maximum Clock Frequency
15
15
MHz
For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating
values.
Table 2-217 • Embedded FlashROM Access Time
Military-Case Conditions: TJ = 125°C, VCC = 1.425 V for A3PE600L and A3PE3000L
Parameter
Description
–1
Std.
Units
tSU
tHOLD
tCK2Q
FMAX
Note:
Address Setup Time
0.58
0.68
ns
Address Hold Time
0.00
0.00
ns
Clock to Out
12.77
15.01
ns
Maximum Clock Frequency
15
15
MHz
For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating
values.
Table 2-218 • Embedded FlashROM Access Time
Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V for A3P250 and
A3P1000
Parameter
Description
–1
Std.
Units
tSU
tHOLD
tCK2Q
FMAX
Note:
Address Setup Time
0.64
0.75
ns
Address Hold Time
0.00
0.00
ns
Clock to Out
19.54
22.97
ns
Maximum Clock Frequency
15
15
MHz
For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating
values.
2-148
Revision 3