M1A3P1000-1PQ208M Datasheet, PDF (52/212 Pages) Microsemi Corporation – Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

Military ProASIC3/EL DC and Switching Characteristics
For example, at 110°C, the short current condition would have to be sustained for more than three
months to cause a reliability concern. The I/O design does not contain any short circuit protection, but
such protection would only be needed in extremely prolonged stress conditions.
Table 2-43 • Duration of Short Circuit Event before Failure
Temperature
Time before Failure
–50ºC
> 20 years
–40°C
> 20 years
0°C
> 20 years
25°C
> 20 years
70°C
5 years
85°C
2 years
100°C
6 months
110°C
3 months
125°C
1 month
Table 2-44 • I/O Input Rise Time, Fall Time, and Related I/O Reliability
Input Buffer
Input Rise/Fall Time (min.)
Input Rise/Fall Time (max.)
Reliability
LVTTL/LVCMOS
No requirement
10 ns *
20 years (110°C)
LVDS/B-LVDS/
M-LVDS/LVPECL
No requirement
10 ns *
10 years (100°C)
Note:
*The maximum input rise/fall time is related to the noise induced in the input buffer trace. If the noise is low, the rise
time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more
susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization
of the system to ensure that there is no excessive noise coupling into input signals.
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Revision 3