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MC9S12NE64CPVE Datasheet, PDF (509/554 Pages) Freescale Semiconductor, Inc – MC9S12NE64 Device Overview
I/O Characteristics
Table A-6. Preliminary 3.3 V I/O Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max Unit
P Input High Voltage
1
T Input High Voltage
VIH
0.65*VDD3
—
—
V
VIH
—
— VDD3 + 0.3 V
P Input Low Voltage
2
T Input Low Voltage
VIL
—
—
0.35*VDD3
V
VIL
VSS3 – 0.3
—
—
V
3
C Input Hysteresis
VHYS
250
mV
Input Leakage Current (pins in high ohmic input
4
P mode) 1
Iin
Vin = VDD5 or VSS5
–2.5
—
2.5
µA
Output High Voltage (pins in output mode)
5
C Partial Drive IOH = –0.75 mA
VOH
VDD3 – 0.4 —
—
V
Output High Voltage (pins in output mode)
6
P Full Drive IOH = –4.5 mA
VOH
VDD3 – 0.4 —
—
V
Output Low Voltage (pins in output mode)
7
C Partial Drive IOL = +0.9 mA
VOL
—
—
0.4
V
Output Low Voltage (pins in output mode)
8
P Full Drive IOL = +5.5 mA
VOL
—
—
0.4
V
Internal Pull Up Device Current,
9
P tested at VIL Max.
IPUL
—
—
–60
µA
Internal Pull Up Device Current,
10
C tested at VIH Min.
IPUH
–6
—
—
µA
Internal Pull Down Device Current,
11
P tested at VIH Min.
IPDH
—
—
60
µA
Internal Pull Down Device Current,
12
C tested at VIL Max.
IPDL
6
—
—
µA
13 D Input Capacitance
Cin
7
—
pF
Injection current 2
14
T Single Pin limit
IICS
–2.5
—
2.5
µΑ
Total Device Limit. Sum of all injected currents
IICP
–25
25
15
P Port G, H, and J Interrupt Input Pulse filtered 3
tPIGN
3
µs
16
P Port G, H, and J Interrupt Input Pulse passed3
tPVAL
10
µs
1 Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8°C to 12°C in the temperature range from 50°C to 125°C.
2 Refer to Section A.4, “Current Injection,” for more details.
3 Parameter only applies in stop or pseudo stop mode.
MC9S12NE64 Data Sheet, Rev. 1.1
Freescale Semiconductor
509