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MC9S12NE64CPVE Datasheet, PDF (509/554 Pages) Freescale Semiconductor, Inc – MC9S12NE64 Device Overview | |||
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I/O Characteristics
Table A-6. Preliminary 3.3 V I/O Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max Unit
P Input High Voltage
1
T Input High Voltage
VIH
0.65*VDD3
â
â
V
VIH
â
â VDD3 + 0.3 V
P Input Low Voltage
2
T Input Low Voltage
VIL
â
â
0.35*VDD3
V
VIL
VSS3 â 0.3
â
â
V
3
C Input Hysteresis
VHYS
250
mV
Input Leakage Current (pins in high ohmic input
4
P mode) 1
Iin
Vin = VDD5 or VSS5
â2.5
â
2.5
µA
Output High Voltage (pins in output mode)
5
C Partial Drive IOH = â0.75 mA
VOH
VDD3 â 0.4 â
â
V
Output High Voltage (pins in output mode)
6
P Full Drive IOH = â4.5 mA
VOH
VDD3 â 0.4 â
â
V
Output Low Voltage (pins in output mode)
7
C Partial Drive IOL = +0.9 mA
VOL
â
â
0.4
V
Output Low Voltage (pins in output mode)
8
P Full Drive IOL = +5.5 mA
VOL
â
â
0.4
V
Internal Pull Up Device Current,
9
P tested at VIL Max.
IPUL
â
â
â60
µA
Internal Pull Up Device Current,
10
C tested at VIH Min.
IPUH
â6
â
â
µA
Internal Pull Down Device Current,
11
P tested at VIH Min.
IPDH
â
â
60
µA
Internal Pull Down Device Current,
12
C tested at VIL Max.
IPDL
6
â
â
µA
13 D Input Capacitance
Cin
7
â
pF
Injection current 2
14
T Single Pin limit
IICS
â2.5
â
2.5
µÎ
Total Device Limit. Sum of all injected currents
IICP
â25
25
15
P Port G, H, and J Interrupt Input Pulse ï¬ltered 3
tPIGN
3
µs
16
P Port G, H, and J Interrupt Input Pulse passed3
tPVAL
10
µs
1 Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8°C to 12°C in the temperature range from 50°C to 125°C.
2 Refer to Section A.4, âCurrent Injection,â for more details.
3 Parameter only applies in stop or pseudo stop mode.
MC9S12NE64 Data Sheet, Rev. 1.1
Freescale Semiconductor
509
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