MC9S12NE64CPVE Datasheet, PDF (506/554 Pages) Freescale Semiconductor, Inc – MC9S12NE64 Device Overview

Appendix A Electrical Characteristics
A.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those
conditions apply to all the following data.
NOTE
Instead of specifying ambient temperature, all parameters are
specified for the more meaningful silicon junction temperature. For
power dissipation calculations refer to Section A.8, “Power
Dissipation and Thermal Characteristics.”
Table A-4. Operating Conditions
Rating
Symbol
Min
Typ
Max Unit
I/O and Regulator Supply Voltage
Analog Supply Voltage
V_DDX
3.135
3.3
3.465
V
V_DDA
3.135
3.3
3.465
V
Regulator Supply Voltage
V_DDR
3.135
3.3
3.465
V
Digital Logic Supply Voltage ¹
V_DD
2.375
2.5
2.625
V
PLL Supply Voltage ¹
V_DDPLL
2.375
2.5
2.625
V
Voltage Difference V_DDX1/V_SSX2 to V_DDA
Voltage Difference V_SSX/V_SSX2 to V_SSA
∆_VDDX
–0.1
0
∆_VSSX
–0.1
0
0.1
V
0.1
V
Oscillator ²
f_osc
0.5
—
25
MHz
Bus Frequency
f_bus
0.5
—
25
MHz
Operating Junction Temperature Range
T
J
–40
—
125
°C
1 _{The device contains an internal voltage regulator to generate VDD1, VDD2, VDDPLL, PHY_VDDRX, PHY_VDDTX and}
PHY_VDDA supplies out of the V_DDX and V_DDR supply. The absolute maximum ratings apply when this regulator is
disabled and the device is powered from an external source.
2 _{For the internal Ethernet physical transceiver (EPHY) to operate properly a 25 MHz oscillator is required.}
A.8 Power Dissipation and Thermal Characteristics
Power dissipation and thermal characteristics are closely related. The user must assure that the
maximum operating junction temperature is not exceeded. The average chip-junction temperature
(T_J) in °C can be obtained from:
TJ = TA + (PD • Θ_JA)
TJ = Junction Temperature, [°C ]
TA = Ambient Temperature, [°C ]
PD = Total Chip Power Dissipation, [W]
MC9S12NE64 Data Sheet, Rev. 1.1
506
Freescale Semiconductor