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| W90P710CD Datasheet, PDF (516/552 Pages) Winbond – 32-BIT ARM7TDMI-BASED MCU | |||
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W90P710CD/W90P710CDG
Table 7.2.1TSMC IO DC Characteristics
PARAMETER
MIN.
TYP.
MAX.
VIL Input Low Voltage
-0.3V
0.8V
VIH Input High Voltage
2V
5.5V
VT Threshold point
1.46V
1.59V
1.75V
VT+ Schmitt trig low to high threshold point
1.47V
1.50V
1.50V
VT- Schmitt trig, high to low threshold point
0.90V
0.94V
0.96V
II
Input leakage current @VI= 3.3V or 0V
+/- 10uA
Ioz
Tri-state output leakage current @Vo =3.3V or 0V
+/- 10UA
RPU Pull-up resister
44Kâ¦
66Kâ¦
110Kâ¦
RPD Pull-down resister
25Kâ¦
50Kâ¦
110Kâ¦
VOL Output low voltage @IOL(min)
0.4V
VOH Output high voltage @IOH (min)
2.4V
Low level output current @VOL = 0.4V 4mA
4.9mA
7.4mA
9.8mA
IOL Low level output current @VOL = 0.4V 8mA
9.7mA
14.9mA
19.5mA
Low level output current @VOL = 0.4V 12mA
14.6mA
22.3mA
29.3mA
High level output current @VOH = 2.4V 4mA
6.3mA
12.8mA
21.2mA
IOH High level output current @VOH = 2.4V 8mA
12.7mA
25.6mA
42.4mA
High level output current @VOH = 2.4V 12mA
19.0mA
38.4mA
63.6mA
NOTE: The values in this table are copied from TSMC 1P5M IO library tpz937g_240b silicon report.
This table is just for reference. More precision DC vaule should refer to Alpha-Test result.
Publication Release Date: September 19, 2006
- 517 -
Revision B2
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