MC68HC912DG128 Datasheet, PDF (435/452 Pages) Motorola, Inc – Microcontrollers

Freescale Semiconductor, Inc.
Appendix: MC68HC912DG128A EEPROM
EEPROM Control Registers
If BYTE = 1 only the location specified by the address written to the
programming latches will be erased. The operation will be a byte or
an aligned word erase depending on the size of written data.
ERASE — Erase Control
0 = EEPROM configuration for programming.
1 = EEPROM configuration for erasure.
Read anytime. Write anytime if EEPGM = 0.
Configures the EEPROM for erasure or programming.
Unless BULKP is set, erasure is by byte, aligned word, row or bulk.
EELAT — EEPROM Latch Control
0 = EEPROM set up for normal reads.
1 = EEPROM address and data bus latches set up for
programming or erasing.
Read anytime.
Write anytime except when EEPGM = 1 or EEDIV = 0.
BYTE, ROW, ERASE and EELAT bits can be written simultaneously
or in any sequence.
EEPGM — Program and Erase Enable
0 = Disables program/erase voltage to EEPROM.
1 = Applies program/erase voltage to EEPROM.
The EEPGM bit can be set only after EELAT has been set. When
EELAT and EEPGM are set simultaneously, EEPGM remains clear
but EELAT is set.
The BULKP, AUTO, BYTE, ROW, ERASE and EELAT bits cannot be
changed when EEPGM is set. To complete a program or erase cycle
when AUTO bit is clear, two successive writes to clear EEPGM and
EELAT bits are required before reading the programmed data. When
AUTO bit is set, EEPGM is automatically cleared after the program or
erase cycle is over. A write to an EEPROM location has no effect
when EEPGM is set. Latched address and data cannot be modified
during program or erase.
MC68HC912DG128 — Rev 3.0
MOTOROLA
Appendix: MC68HC912DG128A EEPROM
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Technical Data
435