MC68HC912DG128 Datasheet, PDF (126/452 Pages) Motorola, Inc – Microcontrollers

Freescale Semiconductor, Inc.
EEPROM Memory
8.3 Future EEPROM Support
Design is underway to introduce an improved EEPROM module with
integrated state machine to simplify programming and erase. This will be
introduced on the 68HC912DG128A together with 5V programming
Flash EEPROM.
Appendix: MC68HC912DG128A EEPROM contains detailed
information to assist in software planning for future EEPROM
compatibility and transition to the 68HC912DG128A. Read, write and
erase algorithms are fully compatible with the present EEPROM design.
The key change comes in the form of a self timed state machine for
erasing & writing data. This is implemented using a pre-scaler loaded
from a new word register EEDIV ($00EE) - located in a presently unused
location this register can be written without effect, reading the location
will return unpredictable data.
Adding 5 bytes of initialisation code to current software to load EEDIV
(with value appropriate for the application’s crystal frequency, EXTALi)
will help ensure compatibility.
Other new features for performance improvement are disabled at reset
providing a compatible algorithm for modifying the EEPROM.
CAUTION: Other areas for consideration include:
Program/Erase is not guaranteed in Limp home mode. Clock monitor
CME bit must be enabled during program/erase.
Program/erase should not be performed with input clock frequency <250
KHz.
Resonator/crystal frequency tolerance should be better than 2% total for
< 2MHz, 3% total for >= 2MHz.
Successive writes to an EEPROM location must be preceded by an
erase cycle.
To ensure full compatibility it is recommended that all of Appendix:
MC68HC912DG128A EEPROM be reviewed.
Technical Data
126
MC68HC912DG128 — Rev 3.0
EEPROM Memory
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