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| MC68HC912DG128 Datasheet, PDF (392/452 Pages) Motorola, Inc – Microcontrollers | |||
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Freescale Semiconductor, Inc.
Electrical Specifications
Table 19-9. EEPROM Characteristics
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol Min Typical Max Unit
Minimum programming clock frequency(1)
fPROG
1.0
MHz
Programming time
tPROG
10
10.5 ms
Clock recovery time, following STOP, to continue programming tCRSTOP
tPROG+ 1 ms
Erase time
tERASE
10
10.5 ms
Write/erase endurance
10,000 30,000(2)
cycles
Data retention
10
10.5 years
1. RC oscillator must be enabled if programming is desired and fSYS < fPROG.
2. If average TH is below 85° C.
Table 19-10. Flash EEPROM Characteristics
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol Min Typical Max
Program/erase supply voltage:
Read only
Program / erase / verify
VFP
VDDâ0.35 VDD
VDD+0.5
11.4
12
12.6
Program/erase supply current
Word program(VFP = 12V)
Erase(VFP = 12V)
Number of programming pulses
Programming pulse
Program to verify time
IFP
30
4
nPP
50
tPPULSE
20
25
tVPROG
10
Program margin
pm
100(1)
Number of erase pulses
Erase pulse
Erase to verify time
Erase margin
nEP
5
tEPULSE
5
â
10
tVERASE
1
em
100(1)
Program/erase endurance
100
Data retention
10
1. The number of margin pulses required is the same as the number of pulses used to program or erase.
Units
V
V
mA
mA
pulses
µs
µs
%
pulses
ms
ms
%
cycles
years
Technical Data
392
MC68HC912DG128 â Rev 3.0
Electrical Specifications
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
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