MC68HC912DG128 Datasheet, PDF (427/452 Pages) Motorola, Inc – Microcontrollers

Freescale Semiconductor, Inc.
Technical Data — MC68HC912DG128
Section 22. Appendix: MC68HC912DG128A EEPROM
22.1 Contents
22.2 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 427
22.3 EEPROM Programmer’s Model . . . . . . . . . . . . . . . . . . . . . . . 428
22.4 EEPROM Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . 430
22.5 Program/Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . 436
22.6 Shadow Word Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 436
22.7 Programming EEDIVH and EEDIVL Registers. . . . . . . . . . . . 437
22.2 Introduction
The 68HC912DG128A EEPROM nonvolatile memory is arranged in a
16-bit configuration. The EEPROM array may be read as either bytes,
aligned words or misaligned words. Access times are one bus cycle for
byte and aligned word access and two bus cycles for misaligned word
operations.
Programming is by byte or aligned word. Attempts to program or erase
misaligned words will fail. Only the lower byte will be latched and
programmed or erased. Programming and erasing of the user EEPROM
can be done in normal modes.
Each EEPROM byte or aligned word must be erased before
programming. The EEPROM module supports byte, aligned word, row
(32 bytes) or bulk erase, all using the internal charge pump. The erased
state is $FF. The EEPROM module has hardware interlocks which
protect stored data from corruption by accidentally enabling the
program/erase voltage. Programming voltage is derived from the
internal V_DD supply with an internal charge pump.
MC68HC912DG128 — Rev 3.0
MOTOROLA
Appendix: MC68HC912DG128A EEPROM
For More Information On This Product,
Go to: www.freescale.com
Technical Data
427