C8051F58X Datasheet, PDF (52/356 Pages) Silicon Laboratories – Programmable hysteresis and response time Configurble as interrupt or reset source Low current

C8051F58x/F59x
Table 5.10. Temperature Sensor Electrical Characteristics
VDDA = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Conditions
Min
Linearity
—
Slope
—
Slope Error*
—
Offset
Temp = 0 °C
—
Offset Error*
Temp = 0 °C
—
Power Supply Current
—
Tracking Time
12
*Note: Represents one standard deviation from the mean.
Typ
± 0.1
3.33
100
856
12
22
—
Max
—
—
—
—
—
—
—
Units
°C
mV/°C
µV/°C
mV
mV
µA
µs
Table 5.11. Voltage Reference Electrical Characteristics
VDDA = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Conditions
Min
Internal Reference (REFBE = 1)
Output Voltage
25 °C ambient (REFLV = 0)
1.45
25 °C ambient (REFLV = 1), V_DD = 2.6 V 2.15
VREF Short-Circuit Current
—
VREF Temperature 
—
Coefficient
Power Consumption
Internal
—
Load Regulation
Load = 0 to 200 µA to AGND
—
VREF Turn-on Time 1
4.7 µF and 0.1 µF bypass
—
VREF Turn-on Time 2
0.1 µF bypass
—
Power Supply Rejection
—
External Reference (REFBE = 0)
Input Voltage Range
1.5
Input Current
Sample Rate = 200 ksps; VREF = 1.5 V —
Power Specifications
Reference Bias Generator REFBE = 1 or TEMPE = 1
—
Typ Max Units
1.50 1.55
V
2.20 2.25
5
10
mA
22 — ppm/°C
30 50
µA
3
— µV/µA
1.5 —
ms
46 —
µs
1.2 — mV/V
— V_DDA
V
2.5 —
µA
21 40
µA
52
Rev. 1.2