C8051F58X Datasheet, PDF (49/356 Pages) Silicon Laboratories – Programmable hysteresis and response time Configurble as interrupt or reset source Low current

C8051F58x/F59x
Table 5.6. Internal High-Frequency Oscillator Electrical Characteristics
V_DD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
IFCN = 111b;
VDD > VREGMIN¹
24 – 0.5% 24² 24 + 0.5%
Units
MHz
Oscillator Supply Current 
(from V_DD)
Internal Oscillator Suspend
OSCICN[7:6] = 00b
ZTCEN = 1
IFCN = 111b;
VDD < VREGMIN¹
Internal Oscillator On
OSCICN[7:6] = 11b
Temp = 25 °C
Temp = 85 °C
Temp = 125 °C
24 – 1.0% 24² 24 + 1.0%
—
880
1300
µA
—
300
—
µA
—
320
—
—
400
—
Wake-up Time From Suspend OSCICN[7:6] = 00b
—
1
—
µs
Power Supply Sensitivity
Constant Temperature
—
0.13
—
%/V
Temperature Sensitivity³
Constant Supply
TC₁
—
5.0
—
ppm/°C
TC₂
—
–0.65
—
ppm/°C²
1. VREGMIN is the minimum output of the voltage regulator for its low setting (REG0CN: REG0MD = 0b). See
Table 5.8, “Voltage Regulator Electrical Characteristics,” on page 50
2. This is the average frequency across the operating temperature range
3. Use temperature coefficients TC₁ and TC₂ to calculate the new internal oscillator frequency using the
following equation:
f(T) = f0 x (1 + TC₁ x (T – T0) + TC₂ x (T – T0)²)
where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C.
Rev. 1.2
49