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C8051F58X Datasheet, PDF (42/356 Pages) Silicon Laboratories – Programmable hysteresis and response time Configurble as interrupt or reset source Low current | |||
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C8051F58x/F59x
5. Electrical Characteristics
5.1. Absolute Maximum Specifications
Table 5.1. Absolute Maximum Ratings
Parameter
Conditions Min Typ Max Units
Ambient Temperature under Bias
â55 â
135
°C
Storage Temperature
â65 â
150
°C
Voltage on VREGIN with Respect to GND
Voltage on VDD with Respect to GND
Voltage on VDDA with Respect to GND
â0.3 â
5.5
V
â0.3 â
2.8
V
â0.3 â
2.8
V
Voltage on VIO with Respect to GND
Voltage on any Port I/O Pin or RST with Respect to
GND
â0.3 â
5.5
V
â0.3 â VIO + 0.3 V
Maximum Total Current through VREGIN or GND
Maximum Output Current Sunk by RST or any Port Pin
â
â
500
mA
â
â
100
mA
Maximum Output Current Sourced by any Port Pin
â
â
100
mA
Note: Stresses outside of the range of the âAbsolute Maximum Ratingsâ may cause permanent damage to the
device. This is a stress rating only and functional operation of the devices at those or any other conditions
above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
42
Rev. 1.2
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