C8051F80X_14 Datasheet, PDF (42/251 Pages) Silicon Laboratories – Mixed Signal ISP Flash MCU Family

C8051F80x-83x
Table 7.6. Flash Electrical Characteristics
Parameter
Conditions
Min Typ
Flash Size (Note 1)
Endurance (Erase/Write)
Erase Cycle Time
Write Cycle Time
Clock Speed during Flash
Write/Erase Operations
C8051F80x and C8051F810/1
C8051F812/3/4/5/6/7/8/9 and C8051F82x
C8051F830/1/2/3/4/5
25 MHz Clock
25 MHz Clock
16384
8192
4096
10000 —
15 20
15 20
1
—
Note: Includes Security Lock Byte.
Max Units
bytes
bytes
bytes
— cycles
26 ms
26 µs
— MHz
Table 7.7. Internal High-Frequency Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Parameter
Conditions
Min Typ Max
Oscillator Frequency
IFCN = 11b
24 24.5 25
Oscillator Supply Current
25 °C, V_DD = 3.0 V,
OSCICN.7 = 1,
OCSICN.5 = 0
— 350 650
Units
MHz
µA
Table 7.8. Capacitive Sense Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min Typ Max Units
Conversion Time
Capacitance per Code
External Capacitive Load
Quantization Noise¹
Supply Current
Single Conversion
RMS
Peak-to-Peak
CS module bias current, 25 °C
CS module alone, maximum code
output, 25 °C
Wake-on-CS Threshold², 25 °C
26
38
50
µs
—
1
—
fF
—
—
45
pF
—
3
—
fF
—
20
—
fF
—
40
60
µA
—
75 105
µA
— 150 165
µA
Notes:
1. RMS Noise is equivalent to one standard deviation. Peak-to-peak noise encompasses ±3.3 standard
deviations.
2. Includes only current from regulator, CS module, and MCU in suspend mode.
42
Rev. 1.0