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| JN517X Datasheet, PDF (74/100 Pages) NXP Semiconductors – Supports multiple network stacks | |||
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NXP Semiconductors
JN517x
IEEE802.15.4 Wireless Microcontroller
14.3.10 32 kHz crystal oscillator
Table 29. 32 kHz crystal oscillator
VDD = 2 V to 3.6 V; Tamb = ï40ï°C to +125ï°C; unless otherwise specified.
Symbol Parameter
Conditions
IDD(xtal) crystal oscillator supply current of cell and counter-logic
tstartup start-up time
Min Typ
[1] -
0.6
[2] -
0.6
Max Unit
-
ïA
-
s
[1] This is sensitive to the ESR of the crystal, VDD and total capacitance at each pin.
[2] Assuming crystal with ESR of less than 40 ï, CL = 9 pF and external capacitances = 15 pF (VDD / 2 mV(p-p).
When external 32 kHz oscillator is used, external capacitances of 15 pF are implemented.
Total external capacitance needs to be 2 ï´ CL, allowing for stray capacitance from chip,
package and PCB (CL = 9 pF).
14.3.11 32 MHz crystal oscillator
Table 30. 32 MHz crystal oscillator
VDD = 2 V to 3.6 V; Tamb = ï40ï°C to +125ï°C; unless otherwise specified.
Symbol Parameter
Conditions
IDD(xtal) crystal oscillator supply current of cell and counter-logic
tstartup start-up time
Min
[1] -
[2] -
Typ Max Unit
275 -
ïA
0.87 -
ms
[1] Excluding band gap ref.
[2] Assuming crystal with ESR of less than 40 ï, CL = 9 pF and external capacitances = 12 pF (VDD / 2 mV(p-p).
When external 32 MHz oscillator is used, external capacitances of 12 pF are
implemented. Total external capacitance needs to be 2 ï´ CL, allowing for stray
capacitance from chip, package and PCB (CL = 9 pF).
14.3.12 High-speed RC oscillator
Table 31. High-speed RC oscillator
VDD = 2 V to 3.6 V; Tamb = ï40ï°C to +125ï°C; unless otherwise specified.
Symbol Parameter
Conditions
IDD(xtal)
fosc
crystal oscillator supply current of cell
oscillator frequency
uncalibrated
calibrated
tstartup
start-up time
Min
Typ
-
145
26.1 ï 16% 26.1
32.1 ï 4% 32.1
-
2.4
Max
-
26.1 ï« 18%
32.1 + 5%
-
Unit
ïA
MHz
MHz
ïs
14.3.13 Temperature sensor
Table 32. Temperature sensor
VDD = 2 V to 3.6 V; Tamb = ï40ï°C to +125ï°C; unless otherwise specified.
Symbol Parameter
Conditions
Tsen
Gsen
ïTsen
sensor temperature
sensor gain
sensor temperature
accuracy
Vo
output voltage
Vsen
sensor voltage
at VDD = 3.0 V and Tamb = 25 °C
Min
ï40
-
-
[1] 540
-
Typ
-
ï1.66
ï±7
Max
+125
-
-
Unit
°C
mV/°C
°C
-
840 mV
720 -
mV
JN517X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.0 â 8 November 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
74 of 100
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