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| JN517X Datasheet, PDF (66/100 Pages) NXP Semiconductors – Supports multiple network stacks | |||
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NXP Semiconductors
JN517x
IEEE802.15.4 Wireless Microcontroller
Table 17. Sleep mode
VDD = 2 V to 3.6 V; Tamb = ï40 ï°C to +125 ï°C; unless otherwise specified.
Symbol Parameter
Conditions
IDD(IO)
I/O supply current
IDD(xtal)
crystal oscillator supply
current
analog and digital supply current; with IO
and 1 ï´ RC oscillator timer wake-up;
Tamb = 25 °C
for 32 kHz internal RC oscillator
HIGH current
LOW current
Iret(RAM) RAM retention current
Tamb = 25 ï°C
IDD(comp) comparator supply current low-power mode
Min
[1] -
[1]
-
-
[2] -
[1][2][3] -
[1] Waiting on IO event.
[2] RAM and comparator supply currents should be added to IDD(IO) if the feature is being used.
[3] Reduced response time.
Typ Max Unit
0.61 -
ïA
0.76 -
ïA
0.40 -
ïA
0.6 -
ïA
0.62 -
ïA
Table 18. Deep sleep mode
VDD = 2 V to 3.6 V; Tamb = ï40 ï°C to +125 ï°C; unless otherwise specified.
Symbol
Parameter
Conditions
IDD
supply current
analog and digital supply current; deep
sleep mode; measured at 25 ï°C
[1] Waiting on chip RESET or IO event.
14.2 IO characteristics
Table 19. IO characteristics
VDD = 2 V to 3.6 V; Tamb = ï40 ï°C to +125 ï°C; unless otherwise specified.
Symbol
Parameter
Conditions
Rpu(int)(DIO)
internal pull-up resistance on pins DIOx[1]
Rpu(int)(RESET_N) internal pull-up resistance on pin RESET_N VDD = 3.6 V
VDD = 3.0 V
VDD = 2.2 V
VDD = 2.0 V
Digital voltages
IO
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
Vhys(i)
input hysteresis voltage
Output on pins DIOx[1]
VOH
HIGH-level output voltage
6.8 mA load
VOL
LOW-level output voltage
6.8 mA load
Min Typ Max Unit
[1] -
100 -
nA
Min Typ Max Unit
40 50 60 kï
300 425 550 kï
400 500 700 kï
650 830 1100 kï
750 950 1350 kï
0.7VD -
D
ï0.3 -
200 310
VDD V
0.27V V
DD
400 mV
VDD ï -
0.4
0
-
VDD V
0.4 V
JN517X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.0 â 8 November 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
66 of 100
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