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HD6473032F Datasheet, PDF (412/572 Pages) Hitachi Semiconductor – Hitachi Microcomputer
14.3 Programming
Table 14-3 indicates how to select the program, verify, and other modes in PROM mode.
Table 14-3 Mode Selection in PROM Mode
Mode
CE OE PGM VPP
Program
L HL
VPP
Verify
LLH
VPP
Program inhibited L L L
VPP
L HH
HL L
HHH
Legend
L: Low voltage level
H: High voltage level
VPP: VPP voltage level
VCC: VCC voltage level
Pins
VCC EO7 to EO0
VCC Data input
VCC Data output
VCC High impedance
EA16 to EA0
Address input
Address input
Address input
Read/write specifications are the same as for the standard HN27C101 EPROM, except that page
programming is not supported. Do not select page programming mode. A PROM programmer that
supports only page-programming mode cannot be used. When selecting a PROM programmer,
check that it supports a byte-at-a-time high-speed programming mode. Be sure to set the address
range to H'0000 to H'FFFF.
14.3.1 Programming and Verification
An efficient, high-speed programming procedure can be used to program and verify PROM data.
This procedure programs the chip quickly without subjecting it to voltage stress and without
sacrificing data reliability. Unused address areas contain H'FF data. Figure 14-4 shows the basic
high-speed programming flowchart. Tables 14-4 and 14-5 list the electrical characteristics of the
chip during programming. Figure 14-5 shows a timing chart.
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