MC68HC908LB8_05 Datasheet, PDF (229/234 Pages) Freescale Semiconductor, Inc – M68HC08 Microcontrollers

Memory Characteristics
NOTES:
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than t_Erase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
3. If the mass erase time is longer than t_MErase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
4. t_RCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to 0.
5. t_HV is defined as the cumulative high voltage programming time to the same row before next erase.
t_HV must satisfy this condition: t_NVS + t_NVH + t_PGS + (t_PROG x 32) ≤ t_HV maximum.
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor de-
fines Typical Endurance, please refer to Engineering Bulletin EB619.
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
MC68HC908LB8 Data Sheet, Rev. 1
Freescale Semiconductor
229