MC68HC05V12 Datasheet, PDF (122/246 Pages) Freescale Semiconductor, Inc – HCMOS Microcontreller Unit

EEPROM
Freescale Semiconductor, Inc.
12.3 EEPROM Programming Register
The contents and use of the programming register are discussed here.
Address: $001C
Bit 7
Read: 0
Write:
Reset: 0
6
5
0
CPEN
0
0
= Unimplemented
4
3
2
1
Bit 0
ER1
ER0 EELAT EERC EEPGM
0
0
0
0
0
Figure 12-1. EEPROM Programming Register (EEPROG)
NOTE:
Any reset including low-voltage reset (LVR) will abort any write in
progress when it is asserted. Data written to the addressed byte will,
therefore, be indeterminate.
CPEN — Charge Pump Enable Bit
When set, CPEN enables the charge pump which produces the
internal programming voltage. This bit should be set with the EELAT
bit. The programming voltage will not be available until EEPGM is set.
The charge pump should be disabled when not in use. CPEN is
readable and writable and is cleared by reset.
ER1−ER0 — Erase Select Bits
ER1 and ER0 form a 2-bit field which is used to select one of three
erase modes: byte, block, or bulk. Table 12-1 shows the modes
selected for each bit configuration. These bits are readable and
writable and are cleared by reset.
Table 12-1. Erase Mode Select
ER1
ER0
Mode
0
0
No erase
0
1
Byte erase
1
0
Block erase
1
1
Bulk erase
Technical Data
EEPROM
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MC68HC05V12 — Rev. 2.0