HD64F3337YCP16V Datasheet, PDF (617/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

23.4.5 Flash Memory Characteristics
Table 23.26 shows the flash memory characteristics.
Table 23.26 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 5.5 V, V_SS = AV_SS = 0 V, T_a = 0 to +75°C
Item
Test
Symbol Min
Typ
Max Unit Condition
Programming time^{*1 *2 *4}
tP
—
10
200
ms/
32 bytes
Erase time^{*1 *3 *5}
tE
—
100
1200 ms/
block
Reprogramming count
N_WEC
—
—
100
Times
Programming Wait time after x
SWE-bit setting^*1
10
—
—
µs
Wait time after y
PSU-bit setting^*1
50
—
—
µs
Wait time after z
P-bit setting^{*1 *4}
150
—
500
µs
Wait time after α
P-bit clear^*1
10
—
—
µs
Wait time after β
PSU-bit clear^*1
10
—
—
µs
Wait time after γ
PV-bit setting^*1
4
—
—
µs
Wait time after ε
dummy write^*1
2
—
—
µs
Wait time after η
4
—
—
µs
PV-bit clear^*1
Maximum
N
programming
count^{*1 *4 *5}
—
—
403
Times
585